The main technological interest lies in the development of two industry-standard cells, a CuInS2 single-junction cell and a wide gap CuGaSe2 cell for tandem cell applications.
For the device and samle preparation thin film deposition techniques similar to industrial standards have been chosen and are further developed; i.e. CCSVT, MOCVD, ED and PVD.
Apart of standard material and device charactarization we also employ special analytical methods; i.e. scannig probe techniques, ion beam analytic and in-situ XPS/UPS analysis at BESSY.