AFORS-HET: numerical simulation of Solar Cells and Measurements
- Modelling of an arbitrary 1D sequence of semiconducting layers and interfaces
- Equilibrium EQ, steady-state DC, small sinusoidal pertubation AC and general transient TR calculation mode
- Arbitrary parameter variations and parameter fitting
- Simulation of internal cell parameters:
band diagram, local cell currents, recombination, phase shifts,... - Simulation of various measurement techniques:
- DC measurements
current-voltage I-V
quantum efficiency QE
photo and electro luminescence PEL
quasi steady state surface photovoltage SPV
quasi steady state photoconductance QSS-PC
Goodman measurement
- AC measurements
impedance IMP
capacitance voltage C-V
capacitance temperature C-T
- TR measurements
transient surface photovoltage decay, TR-SPV
transient photo electro luminescence, TR-PEL
transient photoconductance decay, TR-PC
- I-V 2D network simulation
- calculation of I-V curves according to 1-diode model (new in v2.4.1)
- Optical modelling:
- Lambert-Beer Absorption with multiple passes through the layer stack (new in v2.4.1)
- coherent or incoherent multiple reflection
- Interface modelling:
- no interface / drift diffusion interface
- thermionic emission interface
- Boundary modelling
- Schottky / Schottky-Bardeen metal/semicoductor contact
- metal/insulator/semiconductor contact
- ideal electron- / hole-contact (new in v2.4.1)
- insulator boundary (new in v2.4.1)
- Layer modelling
- recombination
- Shockey-Read-Hall recombination
- Auger recombination (constant coefficients, according to PC1D, according to Altermatt, according to Kerr/Cuevas) (new in v2.4.1)
- Band-to-Band recombination
- super bandgap generation, sub bandgap generation
- layer of crystalline Silicon (dependance on doping and temperature)
- functional dependance of the electrical layer properties (linear, gaussian, error function, exponential) (new in v2.4.1)
