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Technological semiconductor processing techniques
The following technological semiconductor (silicon) preparation techniques have been established in the department:
Wet chemical processes
- Standard wet cleaning processes:
- H2SO4/H2O2 - mixtures,
- RCA cleaning,
- H- termination.
- Etch processes for surface and layer structuring
- Si
- SiO2
- TCO
- Silicon surfaces
- Etch processes for surface texturing
Photo lithography
Contact illumination (resolution down to 10 µm),
sample size from 10*10 mm² up to 4 inch Ø
positive and negative photo resist
Ink-Jet : printing of etching template in development
High temperature processes
Sample size 4 inch Ø maximum.
- Dry oxidation of Si (T ≤ 1050°C)
- QSource wafer diffusion of boron (T= 800...1000 °C)
- Annealing in nitrogen and forming gas (T = 1050 °C)
Semiconductor characterization methods
- 4-probe measurement setup for resistivity and sheet resistance
- diffusion legth measurements (SPV according to Goodman)
- Thickness measurement with profilometer
- Ellipsometry (IR- laser 1550 nm, VIS LASER 632 nm)
