Topics

The research program of  the institut is related to two topics of POF III,

They are closely connected through the analytical methods and the technological processes of the department.

Silicon based heterostructures

Overview Silicon based heterostructures

Solar cells based on mono-, poly-, or thin film silicon where the highly doped layers at the front and the back sides are deposited from the gas phase at low temperatures. The hetero contact is formed by the Si-absorber and a material with higher energy band gap (TCO, a-Si:H, SiC). The work aims in particular at the development of an "interface engineered" transition region between the Si-absorber and the heteroemitter.

Perovskite

Perovskite

Solar cells based on hybrid metal halide perovskites have recently reached efficiencies above 20%. The material class is also promising for so-called tandem solar cells in combination with crystalline silicon. The challenges for commercialization include a better understanding of the defect formation within the material and the microscopic processes during charge carrier separation under illumination.

 

Electronic structur of semiconductor interfaces

Electronic structur of semiconductor interfaces

  • UPS, XPS, ARUPS, LEED, STM, SIMMS
  • Epitaxie of CuInS2
  • ZnO on Silicon (Semiconductor/Oxide-Interface)
  • TiO2 on Chalcopyrit
  • Intercalationssystems and Na/TiS2-Intercalationsbattery
  • Bufferlayer with chalcogenids