Seminars take place on Thursdays at 10:15
in the EE-IS lecture hall
(Wilhelm-Conrad-Röntgen Campus, Kekuléstr. 5, 1. Floor, room 227),
coffee and cookies are available 15 minutes before the seminar.
Please note that are exceptions from this rule, which are highlighted in the seminar plan.
Dept. of Applied Physics, Eindhoven Univ. of Technology, Plasma & Materials Processing Group
“Atomic Layer Deposition of Metal Oxide Thin Films for Si Heterojunction Solar Cells”
The use of atomic layer deposition (ALD) in the field of silicon photovoltaics is rapidly expanding, both at the academic research level as well as in industry. This can be mostly attributed to its ability to uniformly deposit high-quality thin films over a large area with a high level of compositional control. In this talk I will discuss the status and prospects of ALD metal oxides in silicon solar cells with a focus on the work in our own group. Specifically, the role of ALD in various established and upcoming silicon solar cell architectures will be treated:
- Al2O3 passivation layers in PERC solar cells
- High mobility transparent conductive oxides (TCOs) for Si heterojunction cells
- Novel carrier-selective contacts by ALD
Thursday, January 11th, 10:15 am in the EE-IS lecture hall (room 227, building 12.8), Kekuléstr. 5, WCRC Berlin-Adlershof.
Location: EE-IS lecture hall (room 227), Kekuléstr. 5, WCRC Berlin-Adlershof,
Time: Monday 14:00
next EMIL-seminar talk entitled: