Basic Aspects

Interface Recombination

Fig. 1: Measured SPV(t) signal of a-Si:H(n)/c-Si(p) heterostructures for various gas phase doping concentrations of the amorphous a-Si:H(n) emitter. Note: the highest “effective lifetime” is not obtained for the highest gas phase doping (10000 ppm) but for the rather moderate value of 2500 ppm.