The PECVD cluster deposition tool at PVcomB
For the deposition of amorphous (a-Si:H) and microcrystallline silicon (µc-Si:H) layers and silicon alloys (SiO, SiN, SiC) a cluster tool from Applied Materials (AKT1600) based on plasma-enhanced chemical vapor deposition (PECVD) operated at 13.56 MHz plasma-excitation frequency is used. The fully automated tool is equipped with three process chambers for a substrate size of up to 30 x 30 cm2. This allows for separation of the deposition of doped and intrinsic materials and processing of 6 – 8 tandem modules per day.
To support the PECVD process development in situ diagnostic tools are used :
- Optical emission spectroscopy (OES)
- Mass spectrometry (residual gas analyzer, RGA)
- Non-linear enhanced electron dynamics (NEED)
The data from recipes, processes, and in-situ diagnostics are stored in a data server and visualized together with measurement data (like solar cell I-V results) via the in-house designed PDVisA data base to facilitate easy data management and experiment evaluation as well as baseline control.
 O. Gabriel, S. Kirner, M. Klick, B. Stannowski, R. Schlatmann, Plasma monitoring and PECVD process control in thin film silicon-based solar cell manufacturing, EPJ Photovoltaics, DOI: 10.1051/epjpv/2013028.
Fig. 1: PECVD cluster tool (AKT 1600) for silicon layer deposition at PVcomB.