HZB doctoral student receives award at conference

Jean-Paul Kleider (co-chair conference committee; l.) congratulated Eike Gericke (r.) on his award. © HZB/ K. Lips

Eike Gericke gave a lecture at the 28th International Conference for Amorphous and Nanocrystalline Semiconductors (ICANS) which was awarded as "Best Student Talk". Gericke is a PhD student at the Institute of Nanospektroscopy at the HZB.

His lecture was entitled: "Investigation of the Nanostructure of Hydrogenated Amorphous Silicon using SAXS, SANS and ASAXS".  He reported on the nanostructure of amorphous silicon, such as that used in modern heterojunction solar cells. These results can help to better understand the relationship between electronic properties and the nanostructure of amorphous silicon.

Eike Gericke used small angle scattering with synchrotron radiation at BESSY II and neutrons at BER II to carry out the measurements.

The 28th International Conference for Amorphous and Nanocrystal Semiconductors (ICANS) took place from 4 to 9 August 2019 in Palaiseau (near Paris) at the Ecole Polytechnique.

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