• Volykhov, A.A.; Frolov, A.S.; Neudachina, V.S.; Vladimirova, N.V.; Gerber, E.; Callaert, C.; Hadermann, J.; Khmelevsky, N.O.; Knop-Gericke, A.; Sánchez-Barriga, J.; Yashina, L.V.: Impact of ordering on the reactivity of mixed crystals of topological insulators with anion substitution: Bi2SeTe2 and Sb2SeTe2. Applied Surface Science 541 (2021), p. 148490/1-9

10.1016/j.apsusc.2020.148490
Open Access Version

Abstract:
Three-dimensional topological insulators (TIs) are exotic materials with unique properties. Tetradymite type binary chalcogenides of bismuth and antimony, as well as their mixed crystals, belong to prototypical TIs. Potential device applications of these materials require in-depth knowledge of their stability in the ambient atmosphere and other media maintained during their processing. Here we investigated the reactivity of mixed crystals with anion substitution, Bi2(Se1-xTex)3 and Sb2(Se1-xTex)3, towards molecular oxygen using both in situ and ex situ X-ray photoelectron spectroscopy. The results indicate that, in contrast to cation substitution, partial substitution of tellurium by selenium atoms leads to anomalously high surface reactivity, which even exceeds that of the most reactive binary constituent. We attribute this effect to anion ordering that essentially modifies the bond geometry, especially the respective bond angles as modeled by DFT.