Hunger, R.; Pettenkofer, C.: Band structure investigation of chalcopyrite CuInSe2(001) by angle-resolved photoelectron spectroscopy. In: Shafarman W. [u.a.] [Eds.] : Thin-film compound semiconductor photovoltaics : symposium held March 29 - April 1. 2005, San Francisco, California, U.S.A.Warrendale, PA.: MRS, 2005 (Materials Research Society symposium proceedings ; 865). - ISBN 978-1-55899-972-5, p. F2.2.1-F2.2.12
Abstract:
Clean and ordered chalcopyrite CuInSe2 surfaces are a precondition for the study of the electronic structure by angle resolved photoelectron spectroscopy. The preparation of well defined CuInSe2 surfaces by the combination of molecular beam epitaxy and a selenium capping and decapping process is described. the surface structure of CuInSe2 epilayers with different bulk composition is compared and analysed by LEED. Employing near stoichiometric surfaces, the valence electronic structure of CuInSe2 was investigated by ARUPS at BESSY. This is the first study of the valence band structure of a chalcopyrite semiconductor by photoelectron spectroscopy. The valence band dispersion along G-T i.e. the (001) direction was investigated by variation of the excitation energy from 10 to 35eV under normal emission, and the band dispersion along G-N i.e. the (110) direction was analysed by angular scans with hn=13eV.