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  Hesse, R.; Rodriguez Alvarez, H.; Mainz, R.; Lauche, J.; Herdin, P.; Abou-Ras, D.; Unold, T.; Schock, H.-W.: In-situ montitoring of rapid thermal processes (RTP) of Cu(In,Ga)(SSe)2 by optical methods. In: von Roedern, B. [Ed.] : Photovoltaic cell and module technologies II : 10 - 11 August 2008, San Diego, California, USABellingham, Wash.: SPIE, 2008 (Proceedings of SPIE ; 7045). - ISBN 978-0-8194-7265-6, p. 704505/1-10

Abstract:
Recent investigations of rapid thermal processing (RTP) of thin films using an in-situ optical process control in conjunction with in-situ energy-dispersive X-ray diffraction (EDXRD) are presented. The growth of Cu(In,Ga)(S,Se)2 layers by sulfurization and selenization of sputtered Cu-In-Ga precursor layers was realized by a heating ramp from room temperature to temperatures between 550 and 700 °C during which sulfur powder and/or selenium was evaporated by radiative heating. White light scattered at the surface of the growing Cu(In,Ga)(S,Se)2 layers was monitored by a CCD camera in order to record in-situ the changing optical properties of the films. The reaction chamber was installed at a beam line of the synchrotron facility BESSY to enable the measurement of structural properties of the growing films by EDXRD simultaneously. During the sulfurization and selenization process the growing films pass through various phase transition which could be correlated with the white-light scattering (WLS) signals. Samples made of Cu(In,Ga)(S,Se)2 were grown and studied by means of EDXRD and WLS. Detailed analysis of the time evolution of both signals (EDXRD and WLS) allowed to determine specific signatures in the WLS signals indicating the influence of the process parameters on the growth process of Cu(In,Ga)(S,Se)2.