Rodriguez-Alvarez, H.; Mainz, R.; Marsen, B.; Weber, A.; Schock, H.W.: Copper sulfide assisted recrystallization of Cu-poor CuInS2 observed in-situ by polychromatic X-ray diffraction. In: Yamada, A. [Ed.] : Thin-Film Compound Semiconductor Photovoltaics 2009Warrendale, PA: Materials Research Society, 2009 (MRS Symposium Proceedings ; 1165). - ISBN 978-1-60511-138-4, p. 1165-M02-07/1-7
Abstract:
The microstructural changes during heating of bi-layers of Cu-poor CuInS2 and CuS under different sulfur excess conditions were studied. This was done by means of energy dispersive X-ray diffraction at the EDDI beamline of the BESSY II synchrotron facility, in a vacuum setup where the sulfur supply can be controlled. Understood as the formation of a new microstructure, the recrystallization of the Cu-poor CuInS2 phase was characterized by a change in the reflection profile (from pure Cauchy to pure Gauss), the reduction of the breadth and a subsequent normalized-intensity increase of the 112 chalcopyrite reflection. The Cauchy component of the breadth was used to monitor the recrystallization under different sulfur and heating rate condtions. A model for the recrystallization of Cu-poor CuInS2 in presence of copper sulfide is proposed.