Neitzert, H.-C.; Kunst, M.: Initial Growth Of Thin Hydrogenated Amorphous Silicon Layer On Low Conductivity Substrates Monitored By In-situ Transient Microwave Photoconductivity Measurements. In: Caldas M.J. ... [Ed.] : Physics of semiconductors : 29th international conference, ICPS 29, Rio de Janeiro, Brazil, 27 July - 1 August 2008Melville, NY: American Inst. of Physics, 2010 (AIP conference proceedings ; 1199). - ISBN 978-0-7354-0736-7, p. 23-24
Abstract:
The monitoring of the microwave reflection changes after pulsed laser illumination enables the in-situ characterization of important optical and electrical material parameters during the growth of intrinsic hydrogenated amorphous silicon on low conductivity substrates.