Brückner, S.; Barrigón, E.; Supplie, O.; Kleinschmidt, P.; Dobrich, A.; Löbbel, C.; Rey-Stolle, I.; Döscher, H.; Hannappel, T.: Ge(100) surfaces prepared in vapor phase epitaxy process ambient. Physica Status Solidi - Rapid Research Letters 6 (2012), p. 178-180
10.1002/pssr.201206028
Abstract:
Ge(100) substrates essential for subsequent III–V integration were studied in the hydrogen ambient of a metalorganic vapor phase epitaxy reactor. We confirmed thermal oxide and carbon removal by X-ray photoelectron spectroscopy, characterized the (2 × 1)/(1 × 2) surface reconstruction by low energy electron diffraction, and employed reflection anisotropy spectroscopy for optical in situ analysis. Our Ge(100) spectra de- viate from reference data of clean surfaces prepared in ultra-high vacuum, most probably due to the presence of hydrogen bonds. The observation was correlated with Fourier-transform infrared spectroscopy showing coupled H–Ge–Ge–H stretch modes associated with a monohydride termination of the Ge(100) surface.