George, B.M.; Behrends, J.; Schnegg, A.; Schulze, T.F.; Fehr, M.; Korte, L.; Rech, B.; Lips, K.; Rohrmüller, M.; Rauls, E.; Schmidt, W.G.; Gerstmann, U.: Atomic Structure of Interface States in Silicon Heterojunction Solar Cells. Physical Review Letters 110 (2013), p. 136803/1-5
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Combining orientation dependent electrically detected magnetic resonance (EDMR) and g-tensor calculations based on density functional theory (DFT) we assign microscopic structures to paramagnetic states involved in spin-dependent recombination at the interface of amorphous/crystalline silicon (a-Si:H/c-Si) heterojunction solar cells. We find that (i) the interface exhibits microscopic roughness, (ii) the electronic structure of the interface defects is mainly determined by c-Si, (iii) identify the microscopic origin of the conduction band tail state in the a-Si:H layer and (iv) propose a detailed recombination mechanism.