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  Juma, A.; Kavalakkatt, J.; Pistor, P.; Latzel, B.; Schwarzburg, K.; Dittrich, T.: Formation of a disorderd hetero-junction by diffusion of Cu(I) from CuSCN into In₂S₃ layers: a surface photovoltage study. Physica Status Solidi A 209 (2012), p. 663-668

10.1002/pssa.201100509

Abstract:
Charge-selective disordered hetero-junctions were formed in evaporated In2S3 layers by diffusing at 200 °C CuI from a CuSCN source. The thicknesses of In2S3 layers and diffusion times were varied between 5 and 80 nm and between 2 and 19 min, respectively. In some cases CuSCN layers were etched back with pyridine. Spectral and time-dependent surface photovoltage measurements were carried out in the capacitor arrangement. It was observed that a competing process of charge separation and relaxation was initiated together with the formation of the charge-selective In2S3/In2S3:Cu hetero-junction.