Melskens, J.; Schnegg, A.; Baldansuren, A.; Lips, K.; Plokker, M.P.; Eijt, S.W.H.; Schut, H.; Fischer, M.; Zeman, M.; Smets, A.H.M.: Structural and electrical properties of metastable defects in hydrogenated amorphous silicon. Physical Review B 91 (2015), p. 245207/1-6
10.1103/PhysRevB.91.245207
Open Access Version (externer Anbieter)
Abstract:
The structural and electrical properties of metastable defects in various types of hydrogenated amorphous silicon (a-Si:H) have been studied using a powerful combination of continuous wave electron-paramagnetic resonance (cw-EPR) spectroscopy,electron spin echo detected EPR (ESE-EPR) spectroscopy and Doppler broadening positron annihilation spectroscopy (DB-PAS). The observed dependence of the paramagneticdefect density on the Doppler S parameter, indicates that porous, nanosized void rich materials exhibit higher spin densities, while dense, divacancy dominated materials show smaller spin densities. However, after light soaking more similar spin densities are observed, indicating a long term defect creation process in the Staebler-Wronski effect (SWE) that does not depend on the a-Si:H nanostructure. Based on the From ESE decays it appears that there are fast and slowly relaxing defect types, which are linked to various defect configurations in small and large open volume deficiencies. A new nanoscopic model for the creation of light-induced defects in the a-Si:H nanostructure is proposed.