• Filatova, E.O.; Konashuk, A.S.; Petrov, Yu.; Ubyivovk, E.; Sokolov, A.A.; Selivanov, A.; Drozd, V.: NEXAFS study of electronic and atomic structure of active layer in Al/indium tin oxide/TiO2 stack during resistive switching. Science and Technology of Advanced Materials 17 (2016), p. 274-284

10.1080/14686996.2016.1182851
Open Access Version