Tessarek, C.; Fladischer, S.; Dieker, C.; Sarau, G.; Hoffmann, B.; Bashouti, M.; Göbelt, M.; Heilmann, M.; Latzel, M.; Butzen, E.; Figge, S.; Gust, A.; Höflich, K.; Feichtner, T.; Büchele, M.; Schwarzburg, K.; Spiecker, E.; Christiansen, S.: Self-Catalyzed Growth of Vertically Aligned InN Nanorods by Metal-Organic Vapor Phase Epitaxy. Nano Letters 16 (2016), p. 3415-3425
10.1021/acs.nanolett.5b03889
Abstract:
Vertically aligned hexagonal InN nanorods were grown mask-free by conventional metal−organic vapor phase epitaxy without any foreign catalyst. The In droplets on top of the nanorods indicate a self-catalytic vapor−liquid−solid growth mode. A systematic study on important growth parameters has been carried out for the optimization of nanorod morphology. The nanorod N-polarity, induced by high temperature nitridation of the sapphire substrate, is necessary to achieve vertical growth. Hydrogen, usuallyinapplicable during InN growth due to formation of metallic indium, and silane are needed to enhance the aspect ratio and to reduce parasitic deposition beside the nanorods on the sapphire surface. The results reveal many similarities between InN and GaN nanorod growth showing that the process despite the large difference in growth temperature is similar. Transmission electron microscopy, spatially resolved energy-dispersive X-ray spectroscopy, X-ray diffraction, X-ray photoelectron spectroscopy, and Raman spectroscopy have been performed to analyze the structural properties. Spatially resolved cathodoluminescence investigations are carried out to verify the optical activity of the InN nanorods. The InN nanorods are expected to be the material of choice for high-efficiency hot carrier solar cells.