Stegemann, B.; Gad, K.; Balamou, P.; Sixtensson, D.; Vössing, D.; Kasemann, M.; Angermann, H.: Ultra-thin silicon oxide layers on crystalline silicon wafers : comparison of advanced oxidation techniques with respect tochemically abrupt SiO2/Si interfaces with low defect densities. Applied Surface Science 395 (2017), p. 78-85
10.1016/j.apsusc.2016.06.090
Abstract:
Six advanced oxidation techniques were analyzed, evaluated and compared with respect to the prepa-ration of high-quality ultra-thin oxide layers on crystalline silicon. The resulting electronic and chemicalSiO2/Si interface properties were determined by a combined x-ray photoemission (XPS) and surface pho-tovoltage (SPV) investigation. Depending on the oxidation technique, chemically abrupt SiO2/Si interfaceswith low densities of interface states were fabricated on c-Si either at low temperatures, at short times,or in wet-chemical environment, resulting in each case in excellent interface passivation. Moreover, thebeneficial effect of a subsequent forming gas annealing (FGA) step for the passivation of the SiO2/Si inter-face of ultra-thin oxide layers has been proven. Chemically abrupt SiO2/Si interfaces have been shown togenerate less interface defect states.