Business card

Dr. Heike Angermann

Institute Silicon Photovoltaics

Tel (030) 8062 - 41368 Fax (030) 8062 - 41333 mail


Angermann, H.; Laades, A.; Kegel, J.; Klimm, C.; Stegemann, B.: Improvement of silicon solar cell substrates by wet-chemical oxidation studied by surface photovoltage measurements. Solid State Phenomena 219 (2015), p. 291-296

Balamou, P.; Angermann, H.; Stegemann, B.: Reduction of the Interface Defect Density on Crystalline Silicon Solar Cell Substrates by Wet-chemical Preparation of Ultrathin SiOx Passivation Layers. In: Photovoltaic Specialist Conference (PVSC) New Orleans, LA, 2015 IEEE 42nd. IEEE Journal of Photovoltaics 5, 2015. - ISBN 978-1-4799-7944-8, p. 1-5

Gad, K.; Vössing, D.; Balamou, P.; Hiller, D.; Stegemann, B.; Angermann, H.; Kasemann, M.: Improved Si/SiOχ interface passivation by ultra-thin tunneling oxide layers prepared by rapid thermal oxidation. Applied Surface Science 353 (2015), p. 1269-1276

Gad, K.; Vössing, D.; Balamou, P.; Hiller, P.; Stegemann, B.; Angermann, H.; Kasemann, M.: High quality tunneling oxides for passivated contacts and heterojunctions for high efficiency silicon solar cells. In: 2015 IEEE 42nd Proceedings of Photovoltaic Specialist Conference (PVSC). IEEE, 2015. - ISBN 978-1-4799-7944-8, p. 1-6


Angermann, H.: Conditioning of Si-interfaces by wet-chemical oxidation: electronic interface properties study by surface photovoltage measurements. Applied Surface Science 312 (2014), p. 3-16

Lu, W.; Leendertz, C.; Korte, L.; Töfflinger, J.A.; Angermann, H.: Passivation properties of subnanometer thin interfacial silicon oxide films. Energy Procedia 55 (2014), p. 805-812

Kegel, J.; Angermann, H.; Stürzebecher, U.; Conrad, E.; Mews, M.; Korte, L.; Stegemann, B.: Over 20% conversion efficiency on silicon heterojunction solar cells by IPA-free substrate texturization. Applied Surface Science 301 (2014), p. 56-62

Stegemann, B.; Kegel, J.; Mews, M.; Conrad, E.; Korte, L.; Stürzebecher, U.; Angermann, H.: Evolution of the charge carrier lifetime characteristics in crystalline silicon wafers during processing of heterojunction solar cells. Energy Procedia 55 (2014), p. 219–228


Laades, A.; Angermann, H.; Sperlich, H.-P.; Stürzebecher, U.; Álvarez, C.; Bähr, M.; Lawerenz, A.: Wet chemical oxidation of silicon surfaces prior to the deposition of all-PECVD AlOx/a-SiNx passivation stacks for silicon solar cells. Solid State Phenomena 195 (2013), p. 310-313

Stegemann, B.; Kegel, J.; Mews, M.; Conrad, E.; Korte, L.; Stürzebecher, U.; Angermann, H.: Passivation of Textured Silicon Wafers: Influence of Pyramid Size Distribution, a-Si:H Deposition Temperature, and Post-Treatment. Energy Procedia 38 (2013), p. 881-889

Kegel, J.; Angermann, H.; Stürzebecher, U.; Stegemann, B.: IPA-free texturization of n-type Si wafers: Correlation of optical, electronic and morphological surface properties. Energy Procedia 38 (2013), p. 833-842


Angermann, H.; Laades, A.; Stürzebecher, U.; Conrad, E.; Klimm, C.; Schulze, T.F.; Jacob, K.; Lawerenz, A.; Korte, L.: Wet-chemical preparation of textured silicon solar cell substrates: Surface conditioning and electronic interface properties. Solid State Phenomena 187 (2012), p. 349-352

Angermann, H.; Rappich, J.: Wet-Chemical Conditioning of Silicon Substrates for a-Si:H/c-Si Heterojunctions. In: van Sark, W.; Korte, L.; Roca, F. [Eds.] : Physics and Technology of Amorphous-Crystalline Heterostructure Silicon Solar cells. Berlin: Springer, 2012 (Engineering Materials). - ISBN 978-3-642-22274-0, p. 45-94

Angermann, H.; Wolke, K.; Gottschalk, C.; Moldovan, A.; Roczen, M.; Fittkau, J.; Zimmer, M.; Rentsch, J.: Electronic interface properties of silicon substrates after ozone based wet-chemical oxidation studied by SPV measurements. Applied Surface Science 258 (2012), p. 8387-8396

Wolke, K.; Gottschalk, Ch.; Rentsch, J.; Angermann, H.: Ozone based chemical oxide growth for crystalline solar cell production. Solid State Phenomena 187 (2012), p. 321-324

Varache, R.; Angermann, H.; Korte, L.; Gueunier-Farret, M.-E.; Kleider, J.P.: Controlled interfacial wet-chemical oxide for amorphous silicon/crystalline silicon heterojunction solar cells. In: Nowak, S. [Ed.] : 27th European Photovoltaic Solar Energy Conference and Exhibition ; Frankfurt, Main: EU PVSEC ; 24.9.2012-28.9.2012. München: WIP, 2012. - ISBN 3-936338-28-0, p. 1582-1585


Angermann, H.; Gref, O.; Stegemann, B.: Effect of wet-chemical substrate smoothing on passivation of ultrathin-SiO2/n-Si(111) interfaces prepared with atomic oxygen at thermal impact energies. Central European Journal of Physics 9 (2011), p. 1472-1481

Angermann, H.; Wünsch, F.; Kunst, M.; Laades, A.; Stürzebecher, U.; Conrad, E.; Korte, L.; Schmidt, M.: Effect of wet-chemical substrate pretreatment on electronic interface properties and recombination losses of a-Si:H/c-Si and a-SiNxH/c-Si hetero-interfaces. Physica Status Solidi C 8 (2011), p. 879-882

Wolke, K.; Gottschalk, Ch.; Moldovan, A.; Oltersdorf, A.; Angermann, H.: Ozone based chemical oxide growth for crystalline silicon solar cell production. In: Ossenbrink, H. [u.a.] [Eds.] : 26th European Photovoltaic Solar Energy Conference 5 - 9 September, Hamburg, Germany. München: WIP, 2011. - ISBN 3-936338-27-2, p. 839-842


Angermann, H. ; Uredat, S. ; Zettler J.-T.: Surface Texturization and Interface Passivation of Mono- and Polycrystalline Silicon Substrates: Evaluation of the Wet Chemical Treatments by UV-NIR-Reflectance. In: 24th European Photovoltaic Solar Energy Conference, EU PVSEC ; proceedings of the international conference, held in Hamburg, Germany, 21 - 25 September 2009. Munich: WIP, 2009, p. 1954-1957

Angermann, H.; Conrad, E.; Korte, L.; Rappich, J.; Schulze, T.F.; Schmidt, M.: Passivation of textured substrates for a-Si:H/c-Si hetero-junction solar cells: Effect of wet-chemical smoothing and intrinsic a-Si:H interlayer. Materials Science and Engineering B 159-160 (2009), p. 219-223

Sievert, W.; Zimmermann, K.-U.; Hartmann, B.; Klimm, C.; Jacob, K.; Angermann, H.: Surface texturization and interface passivation of mono-crystalline silicon substrates by wet chemical treatments. Solid State Phenomena 145-146 (2009), p. 223-226


Angermann, H.: Passivation of structured p-type silicon interfaces: Effect of surface morphology and wet-chemical pre-treatment. Applied Surface Science 254 (2008), p. 8067-8074

Angermann, H. ; Korte, L. ; Rappich, J. ; Conrad, E. ; Sieber, I. ; Schmidt, M. ; Hübener, K. ; Hauschild, J.: Optimisation of electronic interface properties of a-Si:H/c-Si hetero-junction solar cells by wet-chemical surface pre-treatment. Thin Solid Films 516 (2008), p. 6775-6781

Angermann, H. ; Rappich, J. ; Korte, L. ; Sieber, I. ; Conrad, E. ; Schmidt, M. ; Hübener, K. ; Polte, J. ; Hauschild, J.: Wet-chemical passivation of atomically flat and structured silicon substrates for solar cell application. Applied Surface Science 254 (2008), p. 3615-3625


Angermann, H.; Henrion, W.; Rebien, M.; Röseler, A.: Wet-chemical preparation and spectroscopic characterization of Si interfaces. Applied Surface Science 235 (2004), p. 322-339

Angermann, H.; Henrion, W.; Rebien, M.; Röseler, A.: Wet-chemical passivation and characterization of silicon interfaces for solar cell applications . Solar Energy Materials and Solar Cells 83 (2004), p. 331-346


Angermann H.: Characterization of wet-chemically treated silicon interfaces by surface photovoltage measurements. Analytical and Bioanalytical Chemistry 374 (2002), p. 676-680

Henrion, W.; Rebien, M.; Angermann, H.; Röseler, A.: Spectroscopic investigations of hydrogen termination, oxide coverage, roughness, and surface state density of silicon during native oxidation in air. Applied Surface Science 202 (2002), p. 199-205


Angermann H.: Chemische Konditionierung der Silicium-Oberfläche : Präparation und Charakterisierung von Wasserstoff-terminierten und naßchemisch oxydierten Si (111)- und Si (100)-Oberflächen. Berlin: Berliner Debatte Wiss.-Verl., 2001. - ISBN 3-931703-89-4
Zugl.: Berlin, Freie Univ., Diss., 1999

Angermann H. ; Henrion W. ; Röseler A.: Wet-chemical conditioning of silicon: electronic properties correlated with the surface morphology. In: Nalwa H.S. [Ed.] : Silicon-based materials and devices. Vol. 1. Materials and processing. San Diego, Calif.: Academic Press, 2001. - ISBN 0-12-513918-7, p. 267-298


Angermann, H.; Henrion, W.; Röseler, A.; Rebien, M.: Wet-chemical passivation of Si(111)- and Si(100)- substrates. Materials Science and Engineering B 73 (2000), p. 178-183


Angermann, H.; Henrion, W.; Rebien, M.; Zettler, J.-T.; Röseler, A.: Characterization of chemically prepared Si-surfaces by uv-vis and IR spectroscopic ellipsometry and surface photovoltage. Surface science 388 (1997), p. 15-23


Füssel, W.; Schmidt, M.; Angermann, H.; Mende, G.; Flietner, H.: Defects at the Si/SiO2 interface. Nuclear Instruments & Methods in Physics Research Section A 377 (1996), p. 177-183