2016

F. Lang, N. H. Nickel, J. Bundesmann, S. Seidel, A. Denker,
S. Albrecht, V. V. Brus, J. Rappich, B. Rech , G. Landi,
and H. C. Neitzert
Radiation Hardness and Self-Healing of Perovskite Solar Cells
Adv. Mater. 2016, 28, 8726–8731

2009

J. Vobecky, V. Záhlava, A. Denker, V. Komarnitskyy
Neon implantation and the radiation enhanced diffusion of platinum for the local lifetime control in high power silicon diodes
Nuclear Instruments and Methods in Physics Research B 267 (2009), p. 2832-2838

2008

M. Herms, U. Zeimer, G. Sonia, F. Brunner, E. Richter, M. Wyers, G. Tränkle, T. Brehm, G. Irmer, G. Pensl, A. Denker, J. Opitz-Coutureau
Study of in-depth strain variation in irradiated GaN
J Mater Sci: Mater Electron (2008) 19:S68–S72

G. Sonia, E. Richter, F. Brunner, A. Denker, R. Lossy, M. Mai, F. Lenk, J. Opitz-Coutureau, G. Pensl, J. Schmidt, U. Zeimer, L. Wang, K. Baskar, M. Weyers, J. Würfl, G. Tränkle
Irradiation effects on AlGaN HFET devices and GaN layers
J Mater Sci: Mater Electron (2008) 19:S64–S67

H.-C. Neitzert, M. Ferrara, M. Kunst, A. Denker, Z. Kertész, B. Limata, L. Gialanella, M. Romano
Electroluminescence efficiency degradation of crystalline silicon solar cells after irradiation with protons in the energy range between 0.8 MeV and 65 MeV
phys. stat. sol. (b) 245, No. 9 (2008) 1877–1883

G. Sonia, E. Richter, F. Brunner, A. Denker, R. Lossy, M. Mai, F. Lenk, J. Bundesmann, G. Pensl, J. Schmidt, U. Zeimer, L. Wang, K. Baskar, M. Weyers, J. Würfl, G. Tränkle
2 MeV ion irradiation effects on AlGaN/GaN HFET devices
Solid-State Electronics 52 (2008) 1011–1017

2007

A. Denker, D. Cordini, J. Heufelder, H. Homeyer, H. Kluge, I. Simiantonakis, R. Stark, A. Weber Ion accelerator applications in medicine and cultural heritage
Nuclear Instruments and Methods in Physics Research A 580 (2007) 457–461

G. Sonia, F. Brunner, A. Denker, R. Lossy, F. Lenk, J. Opitz-Coutureau,M. Mai, J. Schmidt, U. Zeimer, L. Wang, K. Baskar, M. Weyers, J. Würfl, G. Tränkle
High energy irradiation effects on AlGaN/GaN HFET devices
Semiconductor Science and Technology 22 (2007) 1220-1224

2006

G. Sonia, F. Brunner, A. Denker, R. Lossy, M. Mai, J. Opitz-Coutureau, G. Pensl, E. Richter, J. Schmidt, U. Zeimer, L. Wang, M. Weyers, J. Wörfl, G. Tränkle Proton and Heavy Ion Irradiation Effects on AlGaN/GaN HFET Devices
IEEE Transactions on Nuclear Science 53 issue 6 part 1 (2006) 3661 - 3666

M. Scherff, R. Drzymalla, R. Gösse, W.R. Fahrner, M. Ferrara, H. Neitzert, J. Opitz-Coutureau, A. Denker, R. Stangl, B. Limata, L. Gialanella, and M. Romano
Proton Damage in Amorphous Silicon/Crystalline Silicon Heterojunction Solar Cells
J. Electrochem. Soc., Volume 153, Issue 12, pp. G1117-G1121 (2006)

G. Sonia, E. Richter, R. Lossy, M. Mai, J. Schmidt, M. Weyers, G. Tränkle, A. Denker, J. Opitz-Coutureau, G. Pensl, I. Brauer, and H. P. Strunk
High and low energy proton irradiation effects on AlGaN/GaN HFETs
Phys. Stat. Sol. (c) 3 (2006) 2338-2341

2005

A. Denker, H. Homeyer, H. Kluge, J. Opitz-Coutureau
Industrial and medical applications of high-energy ions
Nucl. Instr. Meth. B 240 (2005) 61-68

A. Denker, W. Bohne, H. Homeyer, J.Opitz-Cotureau, J. Röhrich, E. Strub
Applications of high-energy ions in materials science
Proceedings of the 17th International Conference on Cyclotrons and their applications 2004

2004

I. Manke, N. Kardjilov, R. Schneider, A. Haibel, A. Denker, A. Rack, A. Hilger, J. Banhart Zerstörungsfreie Messmethoden am Hahn-Meitner-Institut
ZfP-Zeitung 88

I. Manke, N. Kardjilov, R. Schneider, A. Haibel, A. Denker, A. Rack, A. Hilger, F. Garcia-Moreno, J. Banhart
Zerstörungsfreie Messmethoden am Hahn-Meitner-Institut
MP 46 (2004) 404

J. Opitz-Coutureau, J. Bundesmann, A. Denker, H. Homeyer
BIBER - The Berlin Ion Beam Exposure and Research facility
PROCEEDINGS OF THE 7TH EUROPEAN CONFERENCE ON RADIATION AND ITS EFFECTS ON COMPONENTS AND SYSTEMS, ESA SPECIAL PUBLICATIONS 536 (2004) 507-512

2003

A. Denker, W. Bohne, J. Heese, H. Homeyer, H. Kluge, S. Lindner, J. Opitz-Coutureau, J. Röhrich, E. Strub
Swift Ion Beams for Solid State and Materials Science
NUKLEONIKA 48 (Supplement 2), pp.175-180

2001

A. Paraskevopoulos, H.-J. Hensel, S. Schelhase, J. Frahm, J. Kübler, A. Denker, A. Gubenko, E.L. Portnoi
"On-Wafer" Surface Implanted High Power, Picosecond Pulse InGaAs/InP(λ=1.53-1.55um) Laser Diodes
Optical and Quantum Electronics (July-Oct.2001) vol. 33, no. 7-10, p.745-750

2000

A. Paraskevopoulos, H.-J. Hensel, S. Schelhase, J. Frahm, J. Kübler, A. Denker, A. Gubenko, E.L. Portnoi
High Power, Picosecond Pulse Generation from Surface Implanted InGaAsP/InP (λ=1.53 um) Laser Diodes
Conference on Lasers and Electro-Opt. (CLEO 2000). Technical Digest, IEEE Cat. No. 0CH37088, p.99

A. Paraskevopoulos, H.-J. Hensel, S. Schelhase, J. Frahm, J. Kübler, A. Denker, A. Gubenko, E.L. Portnoi
On-Wafer Surface Implanted High-Power Picosecond Pulse InGaAsP/InP (λ=1.53-1.55 um) Laser Diodes
Proceedings of the 12th International Conference on Indium Phosphide and Related Materials
Piscataway, NJ, IEEE Cat. No.00CH37107, p.278-81

1998

K. H. Maier, A. Denker, P. Voss, H-W. Becker
Single event burnout of high-power diodes
Nucl. Inst. and Meth. B 146 (1998) 596-600