Enzenhofer, T.; Unold, T.; Schock, H.W.: Doping induced structural changes in CuInS2 thin films and the effects on optical and electrical properties. Physica Status Solidi A 203 (2006), p. 2624-2629
10.1002/pssa.200669644
Abstract:
The systematical study of the admixture of small amounts of group-II elements (<1 at. %) with Raman and photoluminescence spectroscopy reveal an increase in the Raman response of the cation-anion vibration modes accompanied with the generation of a new broad emission band at 1.35 eV in the PL spectra of the chalcopyrite system Cu-In-S. Intensity dependent PL measurements indicate that this emission band is strongly influenced by a high degree of compensation in contrast to the commonly found donor-acceptor pair recombination in undoped CuInS2 samples. From temperature dependent conductivity measurements an increased concentration of acceptors and donators in doped CuInS2 thin films is found.