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  Merdes, S.; Schmid, M.; Klaer, J.; Klenk, R.; Krammer, J.; Lux-Steiner, M.Ch.: Cu(In,Ga)S₂ based solar cells on In₂O₃:Mo coated substrates for multi-junction applications. In: Ossenbrink, H. [u.a.] [Eds.] : 26th European Photovoltaic Solar Energy Conference 5 - 9 September, Hamburg, GermanyMünchen: WIP, 2011. - ISBN 3-936338-27-2, p. 2951-2954

10.4229/26thEUPVSEC2011-3DV.2.11

Abstract:
Using the sequential process, we have prepared Cu(In,Ga)S2 based solar cells on transparent In2O3:Mo back-contacts for multi-junction applications. A thin layer of Mo was sputtered on the In2O3:Mo transparent back-contact in order to form a MoS2 contact during sulfurization. We have investigated the role of the Mo thickness on the optical and electrical properties of the absorbers and solar cells. A cell efficiency of 8.1% with an open circuit voltage of 817 mV was achieved using a 5 nm thick Mo layer; however this cell showed poor transparency, not exceeding 20%. Reducing the Mo layer thickness improved the transparency of the solar cell; however it also resulted in an increase of the device series resistance and a decrease of the fill factor. The need of introducing a MoS2 layer in the transparent CIGS based solar cell is discussed.