HR-STEM image and EELS elemental distribution profiles across a grain boundary in a Cu(In,Ga)Se2 layer
See also: D. Abou-Ras, et al., Phys. Rev. Lett. (2012), doi: 10.1103/PhysRevLett.108.075502.
Combining imaging, compositional, and electrical analysis on identical positions at the subnanometer level, in order to:
- determine the composition at and around extended structural defects, as important input for ab-initio, density-functional theory calculations.
- identify atomic reconstruction, strain, or redistribution of free charge carriers as dominating mechanism of relaxation at extended structural defects