Deng, C.; Yang, Y.; Wu, J.; Tan, L.; Liu, F.; Du, Y.; Chen, Q.; Chen, X.; Sun, L.; Sun, W.; Lin, J.; Xie, Y.; Lan, Z.; Bai, Y.; Abate, A.: Defect Passivation via Dual-Interface Synergistic Modulation in Perovskite Solar Cells. ACS Energy Letters 10 (2025), p. 3132-3142
10.1021/acsenergylett.5c01081
Abstract:
The interfaces between the selective contacts and the perovskite are crucial for carrier collection in perovskite solar cells (PSCs), significantly affecting the devices’ performance and stability. This study introduces a dual interface synergistic modulation approach to improve the efficiency and stability of PSCs. The bottom interface modifier, 1,4-diaminobutane (DAB), helps create active sites that facilitate the attachment of another modifier on the perovskite film’s surface. Through these DAB-induced active sites, 1,3-bis(3-aminopropyl)-1,1,3,3-tetramethylsiloxane (BTS) can effectively passivate native defects and prevent surface degradation of the perovskite materials. By utilizing DAB and BTS for a dual interface synergistic passivation strategy, we achieve an impressive efficiency of 25.92% (certified at 25.13%) and demonstrate remarkable continuous operational stability with a T90 lifetime exceeding 700 h.