Bosan, H.A.; Beyer, W.; Breuer, U.; Finger, F.; Hambach, N.; Nuys, M.; Pennartz, F.; Amkreutz, D.; Haas, S.: Investigation of Thermal Stability Effects of Thick Hydrogenated Amorphous Silicon Precursor Layers for Liquid-Phase Crystallized Silicon. Physica Status Solidi A 218 (2021), p. 2000435/1-10
10.1002/pssa.202000435
Open Access Version
Abstract:
The thermal stability of thick (≈4 μm) plasma-grown hydrogenated amorphous silicon (a-Si:H) layers on glass upon application of a rather rapid annealing step is investigated. Such films are of interest as precursor layers for laser liquid-phase crystallized silicon solar cells. However, at least half-day annealing at T ≈550 °C is considered to be necessary so far to reduce the hydrogen (H) content and thus avoid blistering and peeling during the crystallization process due to H. By varying the deposition conditions of a-Si:H, layers of rather different thermal stability are fabricated. Changes in the surface morphology of these a-Si:H layers are investigated using scanning electron microscopy and profilometry measurements. Hydrogen effusion, secondary-ion mass spectrometry (SIMS) depth profiling, and Raman spectroscopy measurements are also carried out. In summary, amorphous silicon precursor layers are fabricated that can be heated within 30 min to a temperature of 550 °C without peeling and major surface morphological changes. Successful laser liquid-phase crystallization of such material is demonstrated. The physical nature of a-Si:H material stability/instability upon application of rapid heating is studied.