Ohm, W.; Riedel, W.; Aksünger, Ü.; Greiner, D.; Kaufmann, C.; Lux-Steiner, M.Ch.; Gledhill, S.: Bifacial Cu(In,Ga)Se2 solar cells with submicron absorber thickness: Back-contact passivation and light management. In: IEEE, New York [Ed.] : Photovoltaic Specialist Conference (PVSC), 2015 IEEE 42ndIEEE, New York, 2015. - ISBN 978-1-4799-7944-8, p. 1-5
10.1109/PVSC.2015.7356416
Open Access Version
Abstract:
For bifacial Cu(In,Ga)Se2 solar cells with submicron absorber thickness, an Al2O3-layer deposited by a simple, self-organized spray-pyrolysis process onto the transparent SnO2 :F back-contact is used to increase open circuit voltage and thereby increase power conversion efficiency, especially for rear-illumination, indicating reduced charge carrier back-contact recombination. On non-passivated SnO2 :F, a thin (10nm) Mo-layer improved the electrical back-contact properties, while on Al2O3-passivated SnO2:F, the solar cell performance was higher without Mo-modification. However, even with Momodification, the solar cell performance increased for Al2O3-passivated compared to non-passivated back-contacts demonstrating the benefit of the Al2O3-layer for bifacial solar cells with submicron Cu(In,Ga)Se2 absorber layers.