Siebentritt, S. ; Eisenbarth, T. ; Rockett, A. ; Albert, J. ; Schubert-Bischoff, P. ; Lux-Steiner, M.Ch.: Epitaxially grown single grain boundaries in chalcopyrites. Journal of Physics: Condensed Matter 19 (2007), p. 016004/1-7
10.1088/0953-8984/19/1/016004
Abstract:
To allow an aimed investigation of grain boundaries with a given orientation we have grown epitaxial grain boundaries of CuGaSe2 by metal organic vapour phase epitaxy. The epitaxy on either side of the grain boundary and the S3 character of the grain boundary is shown by EBSD scans. SEM micrographs show a dense grain boundary. TEM micrographs prove that the grain boundary in the film is the direct continuation of the grain boundary in the substrate. HRTEM shows that the grain boundary in the film is a twin as well and thus a S3 boundary. This also justifies the use of a classification scheme that is derived for the cubic system for the tetragonal chalcopyrites Thus by using a S3 grain boundary in the cubic GaAs substrate as a template a S3 grain boundary is obtained in the tetragonal CuGaSe2 film.