some references


Angermann, H. ; Rappich, J. ; Sieber, I. ; Hübener, K. ; Hauschild, J.: Smoothing and passivation of special Si(111) substrates: studied by SPV, PL, AFM and SEM measurements. Analytical and Bioanalytical Chemistry 390 (2008), p. 1463-1470

Intelmann, C.M. ; Hinrichs, K. ; Syritski, V. ; Yang, F. ; Rappich, J.: Recombination behaviour at the ultrathin polypyrrole film/silicon interface investigated by in-situ pulsed photoluminescence. Japanese Journal of Applied Physics 47 (2008), p. 554-557


Mikhaylova, Y.; Lonov, L.; Rappich, J.; Gensch, M.; Esser, N.; Minko, S.; Eichhorn, K.J.; Stamm, M.; Hinrichs, K.: In situ infrared ellipsometric study of stimuli-responsive mixed polyelectrolyte brushes. Analytical Chemistry 79 (2007), p. 7676-7682

Yang, F.; Roodenko, K.; Hinrichs, K.; Rappich, J.: Electronic and surface properties during the etch-back of anodic oxides on Si(111) surfaces in 40% NH4F solution. Journal of Micromechanics and Microengineering 17 (2007), p. 556-560


Hunger, R. ; Jaegermann, W. ; Merson, A. ; Shapira, Y. ; Pettenkofer, C. ; Rappich, J.: Electronic structure of methoxy-, bromo-, and nitrobenzene grafted onto Si(111). Journal of Physical Chemistry B 110 (2006), p. 15432-15441

Rappich, J. ; Merson, A. ; Roodenko, K. ; Dittrich, Th. ; Gensch, M. ; Hinrichs, K. ; Shapira, Y.: Electronic properties of Si surfaces and side reactions during electrochemical grafting of phenyl layers. Journal of Physical Chemistry B 110 (2006), p. 1332-1337


Rappich J.: Initial stages of porous silicon formation: An in-situ investigation of the electronic properties and surface morphology. Physica Status Solidi C 1 (2004), p. 1169-1178


Yahyaoui F. ; Dittrich Th. ; Aggour M. ; Chazalviel J.-N. ; Ozanam F. ; Rappich J.: Etch rates of anodic silicon oxides in dilute fluoride solutions. Journal of The Electrochemical Society 150 (2003), p. B205-B210


Hartig P. ; Dittrich Th. ; Rappich J.: Surface dipole formation and non-radiative recombination at p-Si(111) surfaces during electrochemical deposition of organic layers. Journal of Electroanalytical Chemistry 524-525 (2002), p. 120-126

Hartig, P.; Rappich, J.; Dittrich, Th.: Engineering of Si surfaces by electrochemical grafting of p-nitrobenzene molecules. Applied Physics Letters 80 (2002), p. 67-69

Rappich J. ; Dittrich Th.: Electrochemical passivation of Si and SiGe surfaces. Handbook of thin film materials 4 (2002), p. 1-56


Dittrich Th. ; Timoshenko V.Yu. ; Rappich J. ; Tsybeskov L.: Room temperature electroluminescence from a c-Si p-i-n structure. Journal of Applied Physics 90 (2001), p. 2310-2313

Rappich J.: Anodic oxidation as a low thermal budget process for passivation of SiGe. Solid-State Electronics 45 (2001), p. 1465-1470

Rappich J. ; Sieber I. ; Knippelmeyer R.: Enhanced passivation of the oxide/SiGe interface of SiGe epitaxial layers on Si by anodic oxidation. Electrochemical and Solid-State Letters 4 (2001), p. B11-B13

Xia, X.; Ashruf, C.M.A.; French, P.J.; Rappich, J.; Kelly, J.J.: Etching and passivation of silicon in alkaline solution: a coupled chemical/electrochemical system. The Journal of Physical Chemistry B 105 (2001), p. 5722-5729


Rappich J. ; Lust S. ; Sieber I. ; Henrion W. ; Dohrmann J.K. ; Fuhs W.: Light trapping by formation of nanometer diameter wire-like structures on µc-Si thin films. Journal of Non-Crystalline Solids 266-269 (2000), p. 284-289