Spintronics at BESSY II: Domain walls in magnetic nanowires
Magnetic domains walls are known to be a source of electrical resistance due to the difficulty for transport electron spins to follow their magnetic texture. This phenomenon holds potential for utilization in spintronic devices, where the electrical resistance can vary based on the presence or absence of a domain wall. A particularly intriguing class of materials are half metals such as La2/3Sr1/3MnO3 (LSMO) which present full spin polarization, allowing their exploitation in spintronic devices. Still the resistance of a single domain wall in half metals remained unknown. Now a team from Spain, France and Germany has generated a single domain wall on a LSMO nanowire and measured resistance changes 20 times larger than for a normal ferromagnet such as Cobalt.