Electrostatics do the trick

When inserting an ultrathin dielectric between metal electrode and organic semiconductor, charge carriers (shown here for a positively charged holes in red) are, counter intuitively, more efficiently extracted from their transport level (blue) in the organic to the Fermi level (black) in the metal than without the interlayer.

When inserting an ultrathin dielectric between metal electrode and organic semiconductor, charge carriers (shown here for a positively charged holes in red) are, counter intuitively, more efficiently extracted from their transport level (blue) in the organic to the Fermi level (black) in the metal than without the interlayer. © M. Oehzelt/HZB

A simple model describes what happens between organic semiconductors and metals

Organic semiconductors allow for flexible displays (OLEDs), solar cells (OPVCs), and other interesting applications. One common problem in these devices, however, is the interface between the metallic contacts and the organic semiconductor material, where undesirable losses occur. Now Dr. Martin Oehzelt has shown what these losses between the metal and the organic semiconductors depend upon and how to minimize them. In particular, his model also explains why a thin, electrically insulating layer between the two materials can even facilitate the transition of charge carriers. His results have recently been published in Nature Communications.

Currently, there are many different approaches describing the interface between organic semiconductor materials and metallic contacts. These somewhat contradictory theories, none of which is universally valid for all cases, have now been unified by Oehzelt and developed into a single coherent model based on the electrostatic potential caused by the charge carriers in the metal and the organic semiconductor. “I calculated the impact of the charge carrier distribution on the electronic states at the interface and how these changes feed back onto the charge carrier distribution”, he explains. Oehzelt is presently conducting research with Dr. Georg Heimel as a postdoc for Prof. Norbert Koch, who works at the Humboldt-Universität zu Berlin and the Helmholtz-Zentrum Berlin.

Such calculations have never been so comprehensively carried out before. Performing them, Oehzelt states: “it was surprising to me that the quantum physical level was not that important. The electrostatic effects predominated! The agreement between our model and the experimental data were astonishing.” On the example of pentacene, a common organic semiconductor, Oehzelt has quantitatively checked the model’s predictions for interface losses.

The energy distribution of the electronic states in organic semiconductors determines the minimum energy barrier the charge carriers have to overcome in transitioning from or into the metal. The calculation demonstrates that the shape of this energy barrier can vary, from a step-function to slow, continuously rising curves that lead to considerably lower losses. The latter can be achieved by introducing an extremely thin insulating layer between the organic semiconductor and the metal. Contrary to the general expectation, the introduction of an insulator thus improves the electrical contact.

The results of this work could notably simplify optimization of interfaces and contacts and, thereby, the development of more efficient organic electronic devices.

The work has recently been published in  Nature Communications:

doi 10.1038/ncomms5174
 
 

arö

  • Copy link

You might also be interested in

  • Nanosilver as an electrocatalyst for CO₂ reduction
    Science Highlight
    24.09.2026
    Nanosilver as an electrocatalyst for CO₂ reduction
    Via electrolysis, CO2 can be reduced to CO, a raw material for further chemical products such as fuels. Within the GreenQuest Project, an internation team led by HZB chemist Prashanth Menezes has now systematically investigated catalyst layers made of silver nanoparticles, varying both the size of the particles and their density. The best yield was achieved with nanoparticles with diameters of around 10 nm, which were loosely distributed. Furthermore, they demonstrated how the economic efficiency of the electrochemical cell can be enhanced by integrating an additional chemical reaction at the anode, enabling the simultaneous production of a valuable formic acid, hydrogen, and CO in one device.
  • Spin waves inside a nano-oscillator imaged for the first time
    Science Highlight
    23.09.2026
    Spin waves inside a nano-oscillator imaged for the first time
    For the first time, researchers have directly imaged the magnetisation dynamics inside a spin Hall nano-oscillator — a nanoscale device that converts direct current into tunable microwave signals and is a promising building block for energy-efficient wireless communication and brain-inspired computing. A Swedish–German team led by the University of Gothenburg and Helmholtz-Zentrum Berlin (HZB) achieved this using time-resolved scanning transmission X-ray microscopy at the MAXYMUS instrument at BESSY II. The results, now published in Advanced Materials, reveal spin-wave features that had escaped previous, indirect measurement techniques.
  • Joint power instead of duplicate structures:
    News
    18.09.2026
    Joint power instead of duplicate structures:
    Berlin’s research community is further advancing its research excellence by establishing a high-performance, cross-institutional infrastructure for data and AI. With a joint agreement signed on 18 September 2026, the Berlin University Alliance (BUA), the Helmholtz-Zentrum Berlin (HZB) and the Zuse Institute Berlin (ZIB) are paving the way for a joint data science and AI centre in Berlin-Dahlem and Adlershof.