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  Shvets, I.; Klimovskikh, I.; Aliev, Z.; Babanly, M.; Zúñiga, F.; Sánchez-Barriga, J.; Krivenkov, M.; Shikin, A.; Chulkov, E.: Surface electronic structure of the wide band gap topological insulator PbBi₄Te₄Se₃. Physical Review B 100 (2019), p. 195127/1-5

10.1103/PhysRevB.100.195127
Open Access Version

Abstract:
By means of angle-resolved photoemission spectroscopy (ARPES) measurements and density functional theory (DFT) calculations, the electronic band structure of the topological insulator PbBi4Te4Se3 for both five-layer and seven-layer surface terminations is investigated. The measured and calculated band structure features are in good agreement and indicate two well-resolved topological surface states with distinct spatial localizations within bulk band gap of about 0.3 eV.