Krempaský, J.; Fanciulli, M.; Nicolaï, L.; Minár, J.; Volfová, H.; Caha, O.; Volobuev, V.V.; Sánchez-Barriga, J.; Gmitra, M.; Yaji, K.; Kuroda, K.; Shin, S.; Komori, F.; Springholz, G.; Dil, J.H.: Fully spin-polarized bulk states in ferroelectric GeTe. Physical Review Research 2 (2020), p. 013107 /1-7
10.1103/PhysRevResearch.2.013107
Open Access Version
Abstract:
By measuring the spin polarization of GeTe films as a function of light polarization we observed that the bulk states are fully spin polarized in the initial state, in strong contrast with observations for other systems with a strong spin-orbit interaction and the surface derived states in the same system. In agreement with state-of-the-art theory, our experimental results show that fully spin-polarized bulk states are an intrinsic property of the ferroelectric Rashba semiconductor α-GeTe(111). The fact that the measured spin-polarization vector does not change with light polarization can be explained by the absence of a mixing of states with a different total angular momentum J.