• Rybkina, A.A.; Gogina, A.A.; Tarasov, A.V.; Xin, Y.; Voroshnin, V.Y.; Pudikov, D.A.; Klimovskikh, I.I.; Petukhov, A.E.; Bokai, K.A.; Yuan, C.; Zhou, Z.; Shikin, A.M.; Rybkin, A.G.: Origin of Giant Rashba Effect in Graphene on Pt/SiC. Symmetry 15 (2023), p. 2052/1-11

10.3390/sym15112052
Open Access Version

Abstract:
Intercalation of noble metals can produce giant Rashba-type spin–orbit splittings in graphene. The spin–orbit splitting of more than 100 meV has yet to be achieved in graphene on metal or semiconductor substrates. Here, we report the p-type graphene obtained by Pt intercalation of zero-layer graphene on SiC substrate. The spin splitting of ∼200 meV was observed at a wide range of binding energies. Comparing the results of theoretical studies of different models with the experimental ones measured by spin-ARPES, XPS and STM methods, we concluded that inducing giant spin–orbit splitting requires not only a relatively close distance between graphene and Pt layer but also the presence of graphene corrugation caused by a non-flat Pt layer. This makes it possible to find a compromise between strong hybridization and increased spin–orbit interaction. In our case, the Pt submonolayer possesses nanometer-scale lateral ordering under graphene.