Korte, L.; Schulze, T.F.; Leendertz, C.; Schmidt, M.; Rech, B.: Band alignment at a-Si:H/c-Si hetero-interfaces. In: Baojie Yan ... [Ed.] : Amorphous and polycrystalline thin-film silicon science and technology - 2011 : symposium held April 25 - 29, 2011, San Francisco, California, U.S.A. ; [papers presented in the 2011 MRS spring meeting Symposium A, "Amorphous and Polycrystalline Thin Film Silicon Science and Technology - 2011] MRS, 2011 (MRS Symposium Proceedings ; 1321). - ISBN 978-1-60511-298-5, p. 323-328
10.1557/opl.2011.940
Abstract:
We present an investigation of the band offsets in amorphous/crystalline silicon heterojunctions (a Si:H/c Si) using low energy photoelectron spectroscopy, ellipsometry and surface photovoltage data. For a variation of deposition conditions that lead to changes in hydrogen content and the thereby the a-Si:H band gap by ~180 meV, we find that mainly the conduction band offset DeltaEV varies, while DeltaEC stays constant within experimental error. This result can be understood in the framework of charge neutrality (CNL) band lineup theory.