Schulze, T.F.; Korte, L.; Rech, B.: Microscopic Properties of the Heterointerface in a-Si:h/c-Si High-Efficieny Heterojunction Solar Cells. In: Ossenbrink, H. [u.a.] [Eds.] : 26th European Photovoltaic Solar Energy Conference 5 - 9 September, Hamburg, GermanyMünchen: WIP, 2011. - ISBN 3-936338-27-2, p. 1045-1051
Abstract:
We explore the (near-)interface structure and band lineup of amorphous/crystalline silicon (a-Si:H/c-Si) heterojunctions as employed in high-efficiency heterojunction solar cells. We make use of SIMS profiles and minority carrier lifetime measurements taken on undoped deuterated amorphous silicon [(i)a-Si:D] layers deposited on c-Si from deuterated silane (SiD4) at identical conditions as the layers we have analyzed previously [T. F. Schulze et al., Appl. Phys. Lett. 96, 252102 (2010)]. Additionally, we determine the band offsets at the a-Si:H/c-Si heterointerface combining near-UV photoelectron spectroscopy (NUVPES), surface photovoltage- (SPV) and spectroscopic ellipsometry (SE) measurements. We briefly discuss the implications of the local interface structure for the absorber passivation as well as for the heterojunction band offsets.