Gluba, M.A.; Amkreutz, D.; Troppenz, G.V.; Rappich, J.; Nickel, N.H.: Embedded graphene for large-area silicon-based devices. Applied Physics Letters 103 (2013), p. 073102/1-5
Macroscopic graphene films buried below amorphous and crystalline silicon capping layers are studied by Raman backscattering spectroscopy and Hall-effect measurements. The graphene films are grown by chemical vapor deposition on copper foil and transferred to glass substrates. Uncapped films possess charge-carrier mobilities of 2030 cm^2/Vs at hole concentrations of 3.6x10^12 cm^-2. Graphene withstands the deposition and subsequent crystallization of silicon capping layers. However, the crystallinity of the silicon cap has large influence on the field-induced doping of graphene. Temperature dependent Hall-effect measurements reveal that the mobility of embedded graphene is limited by charged-impurity and phonon-assisted scattering.