• Young, D.L.; Teplin, C. W.; Grover, S.; Lee, B.; Oh, J.; LaSalvia, V.; Amkreutz, D.; Gall, S.; Chahal, M.; Couillard, G.J.; Chuang, T.-K.; Selj, J.; Deceglie, M.; Atwater, H.; Branz, H.M.; Stradins, P.: 600 mV epitaxial crystal silicon solar cells grown on seeded glass. In: Proceedings 39th IEEE Photovoltaic Specialists Conference . IEEE, 2013. - ISBN 978-1-4799-3299-3, p. 54-57

We report progress made at the National Renewable Energy Laboratory (NREL) on crystal silicon solar cells fabricated by epitaxially thickening thin silicon seed layers on glass using hot-wire chemical vapor deposition. Four micron thick devices grown on single-crystal silicon layer transfer seeds on glass achieved open circuit voltages (Voc) over 600 mV and efficiencies over 10%. Other devices were grown on laser crystallized mixed phase solidification (MPS) seeds on glass and e-beam crystallized (EBC) a-Si on SiC coated glass seeds. We discuss the material quality of the various devices on seeds and summarize the prospects for the seed and epitaxy PV approach