Putero, M.; Coulet, M-V.; Muller, C.; Baehtz, C.; Raoux, S.; Cheng, H.-Y.: Effect of Ge doping on GaSb phase transition. In: Proceedings of the E\PCOS 2014 Symposium. , 2014, p. 111-112
http://www.epcos.org/EPCOS2014/epcos2014Symposium.htm

Abstract:
The effect of Ge doping on GaSb crystallization was studied by combined in situ synchrotron techniques. It is shown that both the crystallization temperature and the electrical contrast are increased along with Ge doping. For high and medium Ge doping the mass density change upon crystallization remains negative whereas no change in mass density is measured for low Ge content.