Xiao, Ting: X-ray Spectroscopic Study of Heterostructure Contacting Schemes for Optoelectronic Devices. , 2019
Brandenburgische Technische Universität, BTU Cottbus-Senftenberg
Open Accesn Version

Films of intrinsic and n-type doped (by Sn or H) In2O3 variants have been prepared and their properties are studied using photoelectron spectroscopy (HAXPES and XES & XAS), Hall measurements and spectroscopic ellipsometry before and after annealing treatments. Optoelectronic properties that benefit the device applications of In2O3-based TCOs are investigated, the understanding of which is necessary to obtain a better combination of improved conductivity and transparency. ...