Soleymanzadeh, B.; Beyer, W.; Luekermann, F.; Differt, D.; Pfeiffer, W.; Stiebig, H.: Modification of a-Si:H films via non-linear femtosecond laser pulse absorption. Energy Procedia 60 (2014), p. 90-95
10.1016/j.egypro.2014.12.348
Open Accesn Version
Abstract:
The modification of a-Si:H via non-linear femtosecond laser pulse absorption was studied and the characteristic thresholds for hydrogen diffusion/effusion, crystallization and material ablation were determined. To consider the impact of the hydrogen content on laser materials processing, a-Si:H was deposited at different temperatures (25 °C, 200 °C, 520 °C) resulting in different hydrogen contents (30%, 13%, and <1%). Essential information for device applications such as the degree of crystallization and the Si-H dissociation are obtained from micro-Raman spectroscopy of the laser treated areas. The prospects of a flexible non-linear fs laser material processing of a-Si:H for bulk and surface modification will be discussed.