Dr. habil. Michael Hanke

Paul-Drude-Institut für Festkörperelektronik

Hausvogteiplatz 5-7

10117 Berlin

phone: +49.30.20377.287

e-mail: hanke@pdi-berlin.de

2020


  • Bogula, L.; Helden, L. von; Richter, C.; Hanke, M.; Schwarzkopf, J.; Schmidbauer, M.: Ferroelectric phase transitions in multi-domain K0.9Na0.1NbO3 epitaxial thin films. Nano Future 4 (2020), p. 035005/1-8

  • Budde, M.; Remmele, T.; Tschammer, C.; Feldl, J.; Franz, P.; Lähnemann, J.; Cheng, Z.; Hanke, M.; Ramsteiner, M.; Albrecht, M.; Bierwagen, O.: Plasma-assisted molecular beam epitaxy of NiO on GaN(00.1). Journal of Applied Physics 127 (2020), p. 015306

  • Hanke, S.; Tindall, C.A.; Pippel, J.; Ulbricht, D.; Pirotte, B.; Reboud-Ravaux, M.; Heiker, J.T.; Straeter, N.: Structural Studies on the Inhibitory Binding Mode of Aromatic Coumarinic Esters to Human Kallikrein-Related Peptidase 7. Journal of Medicinal Chemistry 63 (2020), p. 5723-5733

2019


  • Jenichen, B.; Cheng, Z.; Hanke, M.; Herfort, J.: Lattice matched Volmer-Weber growth of Fe3Si on GaAs(001) – the influence of the growth rate. Semiconductor Science and Technology 34 (2019), p. 124002/1-5

  • Von Helden, L.; Bogula, L.; Janolin, P.-E.; Hanke, M.; Breuer, T.; Schmidbauer, M.; Ganschow, S.; Schwarzkopf, J.: Huge impact of compressive strain on phase transition temperatures in epitaxial ferroelectric KxNa1-xNbO3 thin films. Applied Physics Letters 114 (2019), p. 232905/1-6

2018


  • Braun, D.; Schmidbauer, M.; Hanke, M.; Schwarzkopf, J.: Hierarchy and scaling behavior of multi-rank domain patterns in ferroelectric K0.9Na0.1NbO3 strained films. Nanotechnology 29 (2018), p. 015701/1-8

  • Cheng, Z.; Hanke, M.; Galazka, Z.; Trampert, A.: Growth mode evolution during (100)-oriented beta-Ga2O3 homoepitaxy. Nanotechnology 29 (2018), p. 395705/1-6

  • Cheng, Z.; Hanke, M.; Galazka, Z.; Trampert, A.: Thermal expansion of single-crystalline Beta-Ga2O3 from RT to 1200 K studied by synchrotron-based high resolution x-ray diffraction. Applied Physics Letters 113 (2018), p. 182102/1-4

  • Jenichen, B.; Hanke, M.; Gaucher, S.; Trampert, A.; Herfort, J.; Kirmse, H.; Haas, B.; Willinger, E.; Huang, X.; Erwin, S.C.: Ordered structures of (Ge,Si)Fe arising during solid phase epitaxy. Physical Review Materials 2 (2018), p. 051402/1-6

2017


  • Braun, D.; Schmidbauer, M.; Hanke, M.; Kwasniewski, A.; Schwarzkopf, J.: Tunable ferroelectric domain wall alignment in strained monoclinic KxNa1-xNbO3 epitaxial films. Applied Physics Letters 110 (2017), p. 232903/1-4

  • Cheng, Z.; Hanke, M.; Vogt, P.; Bierwagen, O.; Trampert, A.: Phase formation and strain relaxation of Ga2O3 on c-plane and a-plane sapphire substrates as studied by synchrotron-based x-ray diffraction. Applied Physics Letters 111 (2017), p. 162104/1-4

  • Schwarzkopf, J.; Braun, D.; Hanke, M.; Uecker, R.; Schmidbauer, M.: Strain engineering of ferroelectric domains in KxNa-{1-x}NbO3 epitaxial layers. Frontiers in Materials 4 (2017), p. 26/1-10

2016


  • Jenichen, B.; Hanke, M.; Hilse, M.; Herfort, J.; Trampert, A.; Erwin, S.C.: Diffraction at GaAs/Fe3Si core/shell nanowires: the formation of nanofacets. AIP Advances 6 (2016), p. 055108/1-8

  • Jenichen, B.; Herfort, J.; Hanke, M.; Jahn, U.; Kong, X.; Dau, M.T.; Trampert, A.; Kirmse, H.; Erwin, S.C.: Structural properties of Co2TiSi films on GaAs(001). Journal of Applied Physics 120 (2016), p. 225304/1-6

  • Luna, E.; Wu, M.; Hanke, M.; Puustinen, J.; Guina, M.; Trampert, A.: Spontaneous formation of three-dimensionally ordered Bi-rich nanostructures within GaAs1-xBix/GaAs quantum wells. Nanotechnology 27 (2016), p. 325603/1-9

  • Proessdorf, A.; Niehle, M.; Grosse, F.; Rodenbach, P.; Hanke, M.; Trampert, A.: Strain dynamics during La2O3/Lu2O3 superlattice and alloy formation. Journal of Applied Physics 119 (2016), p. 215301/1-5

2015


  • Nakhaie, S.; Wofford, J.M.; Schumann, T.; Jahn, U.; Ramsteiner, M.; Hanke, M.; Lopes, J.M.J.; Riechert, H.: Synthesis of atomically thin hexagonal boron nitride films on nickel foils by molecular beam epitaxy. Applied Physics Letters 106 (2015), p. 213108/1-5

  • Willems, F.; Smeenk, C.T.L.; Zhavoronkov, N.; Kornilov, O.; Radu, I.; Schmidbauer, M.; Hanke, M.; von Korff Schmising, C.; Vrakking, M.J.J.; Eisebitt, S.: Probing ultrafast spin dynamics with high-harmonic magnetic circular dichroism spectroscopy. Physical Review B 92 (2015), p. 220405/1-5

  • Wu, M.; Hanke, M.; Luna, E.; Puustinen, J.; Guina, M.; Trampert, A.: Detecting lateral composition modulation in dilute Ga(As, Bi) epilayers. Nanotechnology 26 (2015), p. 25701/1-7

2014


  • Fons, P.; Rodenbach, P.; Mitrofanov, K.; Kolobov, A.; Tominaga, J.; Shayduk, R.; Giussani, A.; Calarco, R.; Hanke, M.; Riechert, H.; Simpson, R.; Hase, M.: Picosecond strain dynamics in Ge2Sb2Te5 monitored by time-resolved x-ray diffraction. Physical Review B 90 (2014), p. 094305/1-6

  • Grosse, F.; Proessdorf, A.; Hanke, M.; Bierwagen, O.: In Situ Observation of Epitaxial Li–Si-Nanostructure Formation on Si(111). The Journal of Physical Chemistry C 118 (2014), p. 21572 -21579

  • Proessdorf, A.; Niehle, M.; Hanke, M.; Grosse, F.; Kaganer, V.; Bierwagen, O.; Trampert, A.: Epitaxial polymorphism of La2O3 on Si(111) studied by in situ x-ray diffraction. Applied Physics Letters 105 (2014), p. 021601/1-4

2013


  • Proessdorf, A.; Hanke, M.; Jenichen, B.; Braun, W.; Riechert, H.: Volmer-Weber growth of AlSb on Si(111). Applied Physics Letters 102 (2013), p. 041601/1-4

2012


  • Guissani, A.; Perumal, K.; Hanke, M.; Rodenbach, P.; Riechert, H.; Calarco, R.: On the epitaxy of germanium telluride thin films on silicon substrates. Physica Status Solidi B 249 (2012), p. 1939-1944

  • Hanke, M.; Kaganer, V.M.; Bierwagen, O.; Niehle, M.; Trampert, A: Delayed crystallization of ultrathin Gd2O3 layers on Si(111) observed by in-vivo x-ray diffraction. Nanoscale Research Letters 7 (2012), p. 203/1-6

  • Rodenbach, P.; Calarco, R.; Perumal, K.; Katmis, F.; Hanke, M.; Proessdorf, A.; Braun, W.; Giussani, A.; Trampert, A.; Riechert, H.; Fons, P.; Kolobov, A.V.: Epitaxial phase-change materials. Physica Status Solidi - Rapid Research Letters 6 (2012), p. 415

2011


  • Katmis, F.; Calarco, R.; Perumal, K.; Rodenbach, P..; Giussani, A.; Hanke, M.; Proessdorf, A.; Trampert, A.; Grosse, F.; Shayduk, R.; Campion, R.; Braun, W.; Riechert, H.: Insight into the Growth and Control of Single-Crystal Layers of Ge-Sb-Te Phase-Change Material. Crystal Growth & Design 11 (2011), p. 4606-4610

2009


  • Dahm, T.V.; Hinkov, V.; Borisenko, S.V.; Kordyuk, A.A.; Zabolotnyy, V.B.; Fink, J.; Büchner, B.; Scalapino, D.J.; Hanke, W.; Keimer, B.: Strength of the spin-fluctuation-mediated pairing interaction in a high-temperature superconductor. Nature Physics 5 (2009), p. 217-221