X-ray diffraction during MBE



Budde, M.; Remmele, T.; Tschammer, C.; Feldl, J.; Franz, P.; Lähnemann, J.; Cheng, Z.; Hanke, M.; Ramsteiner, M.; Albrecht, M.; Bierwagen, O.: Plasma-assisted molecular beam epitaxy of NiO on GaN(00.1). , Journal of Applied Physics 127 (2020), p. 015306


Von Helden, L.; Bogula, L.; Janolin, P.-E.; Hanke, M.; Breuer, T.; Schmidbauer, M.; Ganschow, S.; Schwarzkopf, J.: Huge impact of compressive strain on phase transition temperatures in epitaxial ferroelectric KxNa1-xNbO3 thin films. , Applied Physics Letters 114 (2019), p. 232905/1-6

Jenichen, B.; Cheng, Z.; Hanke, M.; Herfort, J.: Lattice matched Volmer-Weber growth of Fe3Si on GaAs(001) – the influence of the growth rate. , Semiconductor Science and Technology 34 (2019), p. 124002/1-5


Cheng, Z.; Hanke, M.; Galazka, Z.; Trampert, A.: Growth mode evolution during (100)-oriented beta-Ga2O3 homoepitaxy. , Nanotechnology 29 (2018), p. 395705/1-6

Jenichen, B.; Hanke, M.; Gaucher, S.; Trampert, A.; Herfort, J.; Kirmse, H.; Haas, B.; Willinger, E.; Huang, X.; Erwin, S.C.: Ordered structures of (Ge,Si)Fe arising during solid phase epitaxy. , Physical Review Materials 2 (2018), p. 051402/1-6

Cheng, Z.; Hanke, M.; Galazka, Z.; Trampert, A.: Thermal expansion of single-crystalline Beta-Ga2O3 from RT to 1200 K studied by synchrotron-based high resolution x-ray diffraction. , Applied Physics Letters 113 (2018), p. 182102/1-4


Cheng, Z.; Hanke, M.; Vogt, P.; Bierwagen, O.; Trampert, A.: Phase formation and strain relaxation of Ga2O3 on c-plane and a-plane sapphire substrates as studied by synchrotron-based x-ray diffraction. , Applied Physics Letters 111 (2017), p. 162104/1-4


Jenichen, B.; Hanke, M.; Hilse, M.; Herfort, J.; Trampert, A.; Erwin, S.C.: Diffraction at GaAs/Fe3Si core/shell nanowires: the formation of nanofacets. , AIP Advances 6 (2016), p. 055108/1-8

Luna, E.; Wu, M.; Hanke, M.; Puustinen, J.; Guina, M.; Trampert, A.: Spontaneous formation of three-dimensionally ordered Bi-rich nanostructures within GaAs1-xBix/GaAs quantum wells. , Nanotechnology 27 (2016), p. 325603/1-9

Proessdorf, A.; Niehle, M.; Grosse, F.; Rodenbach, P.; Hanke, M.; Trampert, A.: Strain dynamics during La2O3/Lu2O3 superlattice and alloy formation. , Journal of Applied Physics 119 (2016), p. 215301/1-5

Jenichen, B.; Herfort, J.; Hanke, M.; Jahn, U.; Kong, X.; Dau, M.T.; Trampert, A.; Kirmse, H.; Erwin, S.C.: Structural properties of Co2TiSi films on GaAs(001). , Journal of Applied Physics 120 (2016), p. 225304/1-6


Wu, M.; Hanke, M.; Luna, E.; Puustinen, J.; Guina, M.; Trampert, A.: Detecting lateral composition modulation in dilute Ga(As, Bi) epilayers. , Nanotechnology 26 (2015), p. 25701/1-7

Willems, F.; Smeenk, C.T.L.; Zhavoronkov, N.; Kornilov, O.; Radu, I.; Schmidbauer, M.; Hanke, M.; Korff Schmising, C.; Vrakking, M.J.J.; Eisebitt, S.: Probing ultrafast spin dynamics with high-harmonic magnetic circular dichroism spectroscopy. , Physical Review B 92 (2015), p. 220405

Nakhaie, S.; Wofford, J.M.; Schumann, T.; Jahn, U.; Ramsteiner, M.; Hanke, M.; Lopes, J.M.J.; Riechert, H.: Synthesis of atomically thin hexagonal boron nitride films on nickel foils by molecular beam epitaxy. , Applied Physics Letters 106 (2015), p. 213108/1-5


Proessdorf, A.; Niehle, M.; Hanke, M.; Grosse, F.; Kaganer, V.; Bierwagen, O.; Trampert, A.: Epitaxial polymorphism of La2O3 on Si(111) studied by in situ x-ray diffraction. , Applied Physics Letters 105 (2014), p. 021601/1-4

Grosse, F.; Proessdorf, A.; Hanke, M.; Bierwagen, O.: In Situ Observation of Epitaxial Li–Si-Nanostructure Formation on Si(111). , The Journal of Physical Chemistry C 118 (2014), p. 21572 -21579


Proessdorf, A.; Hanke, M.; Jenichen, B.; Braun, W.; Riechert, H.: Volmer-Weber growth of AlSb on Si(111). , Applied Physics Letters 102 (2013), p. 041601/1-4


Proessdorf, A.; Grosse, F.; Perumal, K.; Braun, W.; Riechert, H.: Anisotropic interface induced formation of Sb nanowires on GaSb(111)A substrates. , Nanotechnology 23 (2012), p. 235301/1-6

Hanke, M.; Kaganer, V.M.; Bierwagen, O.; Niehle, M.; Trampert, A: Delayed crystallization of ultrathin Gd2O3 layers on Si(111) observed by in-vivo x-ray diffraction. , Nanoscale Research Letters 7 (2012), p. 203/1-6

Rodenbach, P.; Calarco, R.; Perumal, K.; Katmis, F.; Hanke, M.; Proessdorf, A.; Braun, W.; Giussani, A.; Trampert, A.; Riechert, H.; Fons, P.; Kolobov, A.V.: Epitaxial phase-change materials. , Physica Status Solidi - Rapid Research Letters 6 (2012), p. 415

Guissani, A.; Perumal, K.; Hanke, M.; Rodenbach, P.; Riechert, H.; Calarco, R.: On the epitaxy of germanium telluride thin films on silicon substrates. , Physica Status Solidi B 249 (2012), p. 1939-1944


Satapathy, D.K.; Jenichen, B.; Ploog, K.H.; Braun, W.: Azimuthal reflection high-energy electron diffraction study of MnAs growth on GaAs(001) by molecular beam epitaxy. , Journal of Applied Physics 110 (2011), p. 023505/1-8

Katmis, F.; Calarco, R.; Perumal, K.; Rodenbach, P..; Giussani, A.; Hanke, M.; Proessdorf, A.; Trampert, A.; Grosse, F.; Shayduk, R.; Campion, R.; Braun, W.; Riechert, H.: Insight into the Growth and Control of Single-Crystal Layers of Ge-Sb-Te Phase-Change Material. , Crystal Growth & Design 11 (2011), p. 4606-4610


Watahiki, T.; Grosse, F.; Braun, W.; Kaganer, V.M.; Proessdorf, A.; Trampert, A.; Riechert, H.: Epitaxial growth and structure of (La,LU)2=3 alloys on Si(111). , Applied Physics Letters 97 (2010), p. 03191171-3

Shayduk, R.; Katmis, F.; Braun, W.; Riechert, H.: Epitaxial growth and structure of Ge-Sb-Te phase change materials on GaSb. , Journal of Vacuum Science & Technology B 28 (2010), p. C3E1-C3E5

Watahiki, T.; Grosse, F.; Kaganer, V.M.; Proessdorf, A.; Braun, W.: Growth and structural characterization of epitaxial (La1-xLux)2O3 layers grown on Si(111). , Journal of Vacuum Science & Technology B 28 (2010), p. C3A5-C3A8

Shayduk, R.: Use of linear scans to obtian |Fhkl|2 and the integrated intensity. , Journal of Applied Crystallography 43 (2010), p. 1121-1123