Rappich, J. ; Zhang, X. ; Chapel, S. ; Sun, G. ; Hinrichs, K.: Passivation of Si surfaces by hydrogen and organic molecules investigated by in-situ photoluminescence techniques. Physica Status Solidi C 7 (2010), p. 210-213
10.1002/pssc.200982438

Abstract:
Passivation of Si surfaces can reduce the recombination losses at surfaces/interfaces and is therefore of high technological interest for development of Si based devices. In this study Si surfaces modified by wet-chemical and electrochemical treatments were investigated by pulsed in-situ photoluminescence (PL) techniques. PL is contactless and suitable to inspect the recombination behavior at the Si surfaces/interfaces.