Wolke, K.; Gottschalk, Ch.; Rentsch, J.; Angermann, H.: Ozone based chemical oxide growth for chrystalline solar cell production. In: 10th International Symposium on Ultra Clean Processing of Semiconductor Surfaces. UCPSS 2010. September 19 - 22, 2010, Ostend, Belgium. , 2010, p. 99-100

A low cost alternative route for uniform hydrophilisation and cleaning is the surface passivation with a thin chemical oxide layer grown by using an ozonised rinse after the final HF dip, potentially combined with an HF/O3 cleaning step. This work investigates the surface characteristic of crystalline substrates after texturing with final passivation by ozon. Oxide growth characteristic, thickness and uniformity as well as impact of surface wettability for inline phosphorus doping are reported. Potential benefit for high quality, low cost wet processing in Si solar production are derived.