Schulze, T.F.; Korte, L.; Conrad, E.; Schmidt, M.; Rech, B.: High-forward-bias transport mechanism in a-Si:H/c-Si heterojunction solar cells. Physica Status Solidi A 207 (2010), p. 657-660
10.1002/pssa.200982747
Abstract:
In order to elucidate the transport mechanism in a-Si:H/c-Si heterojunction solar cells under high forward bias (U > 0.5 V), we conducted temperature-dependent measurements of current–voltage (I–V) curves in the dark and under illumination. ZnO:Al/(p)a-Si:H/(n)c-Si/(n+)a-Si:H cells are compared with inversely doped structures and the impact of thin undoped a-Si:H buffer layers on charge carrier transport is explored. The solar cell I–V curves are analyzed employing a generalized two-diode model which allows fitting I–V data for a broad range of samples. The fitting results are complemented with numerical simulations using AFORS-HET under consideration of microscopic a-Si:H parameters as determined by constant-final-state-yield photoelectron spectroscopy (CFSYS) to identify possible origins for a systematic increase of the high-forward-bias ideality factor along with the open-circuit voltage (Voc). It is further shown that also for a-Si:H/c-Si heterojunctions, dark I–V curve fit parameters can unequivocally be linked to Voc under illumination, which may prove helpful for device assessment.