Varache, R.; Kleider, J.P.; Gueunier-Farret, M.E.; Korte, L.: Silicon heterojunction solar cells: Optimization of emitter and contact properties from analytical calculation and numerical simulation. Materials Science and Engineering B 178 (2013), p. 593-598
10.1016/j.mseb.2012.11.011
Abstract:
a b s t r a c t The key constituent of silicon heterojunction solar cells, the amorphous silicon/crystalline silicon heterojunction (a-Si:H/c-Si), offers a high open-circuit voltage (Voc) potential providing that both the interface defect passivation and the band bending in the c-Si absorber are sufficient. We detail here analytical calculations of the equilibrium band bending in c-Si ( c-Si) in Transparent Conductive Oxide (TCO)/a- Si:H emitter/c-Si absorber structures. We studied the variation of some electronic parameters (density of states, work function) according to relevant experimental values. This study introduces a discussion on the optimization of the doped emitter layer in relation with the work function of the TCO. In particular, we argue on the advantage of having a highly defective (p)a-Si:H emitter layer that maximizes c-Si and reduces the influence of the TCO on Voc. © 2012 Elsevier B.V. All rights reserved.