Mikoushkin, V.M.; Bryzgalov, V.V.; Nikonov, S.Yu.; Solonitsyna, A.P.; Brzhezinskaya, M.M.: Formation of GaAsN/GaN cluster nanostructures on the surface of GaAs by the implantation of low-energy nitrogen ions. Journal of Surface Investigation 6 (2012), p. 971-974
10.1134/S1027451012080137
Abstract:
A nitride nanolayer fabricated on a GaAs (100) surface by implanting N2 + ions (Ei = 1.5 keV) has been studied by high-resolution photoelectron spectroscopy with the use of synchrotron radiation. It has been found that, apart from the dominant GaN wide-gap semiconductor phase, an additional phase of the GaAs(1 – x)Nx narrow-gap solid solution (x < 0.10) is present in the nitride layer. It has been shown that the nitride layer created by ion implantation is a nanostructure with an attribute of a system of quantum dots, since it consists of nanoclusters of the narrow-gap semiconductor in the wide-gap matrix.