Ziegler, J.; Haschke, J.; Käsebier, T.; Korte, L.; Sprafke, A.N.; Wehrspohn, R.B.: Influence of black silicon surfaces on the performance of back-contacted back silicon heterojunction solar cells. Optics Express 22 (2014), p. A1469-A1476
10.1364/OE.22.0A1469
Abstract:
The influence of different black silicon (b-Si) front side textures prepared by inductively coupled reactive ion etching ({ICP}-{RIE}) on the performance of back-contacted back silicon heterojunction ({BCB}-{SHJ}) solar cells is investigated in detail regarding their optical performance, black silicon surface passivation and internal quantum efficiency. Under optimized conditions the effective minority carrier lifetime measured on black silicon surfaces passivated with Al2O3 can be higher than lifetimes measured for the {SiO}2/{SiNx} passivation stack used in the reference cells with standard {KOH} textures. However, to outperform the electrical current of silicon back-contact cells, the black silicon back-contact cell process needs to be optimized with aspect to chemical and thermal stability of the used dielectric layer combination on the cell.